| Ident. | Authors (with country if any) | Title |
|---|
| 000079 |
| High-speed single-photon source based on self-organized quantum dots |
| 000097 |
| Quantum dots for single and entangled photon emitters |
| 000174 |
| Cavity-enhanced emission in electrically driven quantum dot single-photon-emitters |
| 000189 |
| Quantum dot photonics : edge emitter, amplifier and VCSEL |
| 000241 |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000292 |
| Self-organized formation of shell-like InAs/GaAs quantum dot ensembles |
| 000312 |
| Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence |
| 000318 |
| Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots |
| 000331 |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000333 |
| Voltage-capacitance and admittance investigations of electron states in self-organized InAs/GaAs quantum dots |
| 000334 |
| Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates |
| 000348 |
| QD lasers : Physics and applications |
| 000349 |
| Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm |
| 000417 |
| Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy |
| 000439 |
| Wavelength selective charge accumulation in self-organized InAs/GaAs quantum dots |
| 000514 |
| Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm |
| 000539 |
| Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode |
| 000570 |
| Complete suppression of filamentation and superior beam quality in quantum-dot lasers |
| 000611 |
| Recent advances in long wavelength GaAs-based quantum dot lasers |
| 000625 |
| Optical memory concepts with self-organized quantum dots: material systems and energy-selective charging |
| 000636 |
| MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates |
| 000654 |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain |
| 000708 |
| Spectrotemporal response of 1.3 μm quantum-dot lasers |
| 000713 |
| Quantum dot origin of luminescence in InGaN-GaN structures |
| 000716 |
| The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix |
| 000759 |
| Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures |
| 000778 |
| lime-resolved studies of InGaN/GaN quantum dots |
| 000816 |
| Long-wavelength quantum-dot lasers |
| 000838 |
| Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors |
| 000867 |
| Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature |
| 000885 |
| Strain engineering of self-organized InAs quantum dots |
| 000886 |
| Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser |
| 000895 |
| 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them |
| 000945 |
| Reversibility of the island shape, volume and density in Stranski-Krastanow growth |
| 000946 |
| Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots |
| 000964 |
| Optical and structural properties of self-organized InGaAsN/GaAs nanostructures |
| 000979 |
| Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping |
| 000980 |
| Large spectral splitting of TE and TM components of QDs in a microcavity |
| 000983 |
| Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties |
| 000985 |
| InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range |
| 000987 |
| Impact of carrier lateral transport and surface recombination on the PL efficiency of mesas with self-organized quantum dots |
| 000991 |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation |
| 000996 |
| Entropy-driven effects in self-organized formation of quantum dots |
| 000A16 |
| 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots |
| 000A17 |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000A18 |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A21 |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000A26 |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A82 |
| Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate |
| 000A84 |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000A85 |
| Power Conversion Efficiency of Quantum Dot Laser Diodes |
| 000B00 |
| Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots |
| 000B05 |
| Hole and electron emission from InAs quantum dots |
| 000B12 |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000B29 |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000B48 |
| Quantum dots formed by ultrathin insertions in wide-gap matrices |
| 000B80 |
| InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers |
| 000B87 |
| Gaas-based 1.3 μm InGaAs quantum dot lasers : A status report : Special issue papers |
| 000C10 |
| 3.5 W continuous wave operation from quantum dot laser |
| 000C11 |
| 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition |
| 000C12 |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000C15 |
| Optical anisotropy in vertically coupled quantum dots |
| 000C34 |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C45 |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C56 |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C58 |
| Gain characteristics of quantum-dot injection lasers |
| 000C61 |
| Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser |
| 000C65 |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C66 |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000C83 |
| Surface-mode lasing from stacked InGaN insertions in a GaN matrix |
| 000C92 |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm |
| 000C97 |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000D09 |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D11 |
| Optical properties of InAs quantum dots in a Si matrix |
| 000D34 |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000D55 |
| Self-organized InAs quantum dots in a silicon matrix |
| 000D73 |
| Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers |
| 000D82 |
| Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser |
| 000E06 |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E18 |
| 1.75 μm emission from self-organized InAs quantum dots on GaAs |
| 000E73 |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser |
| 000E75 |
| Structural characterization of self-organized nanostructures |
| 000F07 |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 000F30 |
| Optical studies of modulation doped InAs/GaAs quantum dots |
| 000F31 |
| Optical properties of InAlAs quantum dots in an AlGaAs matrix |
| 000F37 |
| Lateral association of vertically-coupled quantum dots |
| 000F43 |
| Injection lasers based on InGaAs quantum dots in an AlGaAs matrix |
| 000F50 |
| Formation of InSb quantum dots in a GaSb matrix |
| 000F51 |
| Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy |
| 000F52 |
| Formation of InAs quantum dots on a silicon (100) surface |
| 000F90 |
| Energy relaxation by multiphonon processes in InAs/GaAs quantum dots |
| 001005 |
| Quantum-dot lasers: Principal components of the threshold current density |
| 001028 |
| Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure |
| 001032 |
| Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix |
| 001034 |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
| 001037 |
| The properties of low-threshold heterolasers with clusters of quantum dots |
| 001044 |
| Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix |
| 001051 |
| Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction |
| 001060 |
| Thermal stability of vertically coupled InAs-GaAs quantum dot arrays |
| 001061 |
| Photoluminescence of InSb quantum dots in GaAs and GaSb matrices |
| 001062 |
| Modulation of a quantum well potential by a quantum-dot array |
| 001085 |
| Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques |
| 001092 |
| Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots |
| 001095 |
| Radiation characteristics of injection lasers based on vertically coupled quantum dots |
| 001114 |
| InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition |
| 001115 |
| High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots |
| 001116 |
| Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition |
| 001126 |
| Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces |
| 001139 |
| Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing |
| 001146 |
| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
| 001150 |
| Identification of radiative recombination channels in quantum dot structures |
| 001153 |
| Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth |
| 001158 |
| Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix |
| 001161 |
| Optical emission range of structures with strained InAs quantum dots in GaAs |
| 001195 |
| Nature of optical transitions in self-organized InAs/GaAs quantum dots |
| 001205 |
| Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment |
| 001210 |
| An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix |
| 001211 |
| A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds |
| 001212 |
| Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots |
| 001301 |
| Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface |
| 001314 |
| Ultranarrow Luminescence Lines from Single Quantum Dots |
| 001315 |
| Structural characterization of (In,Ga)As quantum dots in a GaAs matrix |
| 001320 |
| Tuning and breakdown of faceting under externally applied stress |
